Photosensor and image scanner utilizing the same.

摘要

A photosensor (20a) has a pair of n-type semiconductor layers (21U, 21D) formed on the major surface of a p-type semiconductor substrate (31). A light-shielding pattern (24) comprised of unit light-shielding layers (33) is formed on the major surface of the substrate. When the major surface is scanned by a light beam in the direction (DX) in which the unit light-shielding layers are aligned, a couple of photo-conversion signals indicating a current position of the light beam on the photosensor are generated in the photosensor. Since the light-shielding pattern is directly provided on the sensor body, no grating glass is required other than the photosensor. <IMAGE>