METHOD OF FABRICATING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCT

摘要

A method of fabricating a semiconductor product includes processing of a semiconductor wafer from a front surface including structures disposed in the substrate of the wafer adjacent to the front surface and forming a wiring embedded in a dielectric layer disposed on the front surface of the wafer. The wafer is mounted to a carrier wafer at its front surface so that material can be removed from the backside of the wafer to thin the semiconductor wafer. Backside processing of the semiconductor wafer includes forming implantations from the backside of the wafer, forming deep trenches to isolate the structures from other structures within the wafer, forming a through-silicon via to contact features on the frontside of the wafer, and forming a body contact. Several devices can be generated within the same wafer.

主权项

1. A method of fabricating a semiconductor device, comprising the steps of:
providing a semiconductor wafer having a semiconductive substrate, a first surface and a second surface, the first and second surfaces disposed on opposite sides of the substrate; processing the semiconductor wafer at the first surface, comprising:
forming at least one doping region disposed in the substrate adjacent to the first surface;forming at least one dielectric layer and forming at least one wiring the at least one dielectric layer disposed on the first surface and the at least one wiring embedded in the at least one dielectric layer; andproviding a carrier wafer and attaching the carrier wafer to the semiconductor wafer so that the first surface of the semiconductor wafer faces towards the carrier wafer; and processing the semiconductor wafer at the second surface, comprising:
thinning the semiconductor wafer by removing material from the second surface of the substrate;forming at least one via hole in the substrate extending from the thinned second surface to the wiring; andforming an electrically conductive path that is coupled to the wiring and that extends through the at least one via hole to the thinned second surface of the semiconductor wafer.