| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for delaminating a base substrate and a group III nitride semiconductor layer from each other.SOLUTION: A method for manufacturing a group III nitride semiconductor substrate comprises: an XC layer formation step for forming a TiC layer (XC layer 12) on a sapphire substrate 10, provided that the TiC layer is arranged by alternately and continuously laminating a Ti film (X film 12-1) and a C film 12-2, which are each controlled to have a given thickness, followed by heating; a group III nitride semiconductor layer formation step for forming a group III nitride semiconductor layer 14 on the TiC layer (XC layer 12); and a separation step for separating the sapphire substrate 10 and the group III nitride semiconductor layer 14 from each other.SELECTED DRAWING: Figure 12 |
