| 摘要 |
A semiconductor laser device includes a substrate (1), a first cladding layer (2) formed on the substrate (1), an active layer (4) formed on the first cladding layer (2), and a second cladding layer (5) formed on the active layer (4) and having a conductivity type different from that of the first cladding layer (2), wherein at least one of the first and second cladding layers (2, 5) has a multiquantum barrier structure. The width of the first quantum barrier of the multiquantum barrier structure from the side of the active layer (4) is 24 to 100 nm, the width of the second quantum barrier of the multiquantum barrier structure from the side of the active layer (4) is 5 to 20 nm, and the multiquantum barrier structure is constituted by alternately stacking first thin layers consisting of Inz(Ga1-xAPx)1-zP (x is 0.7 to 1.0 and z is 0 to 1.0) and second thin layers consisting of Inz(Ga1-yAPy)1-zP (y is 0 to 0.3 and z is 0 to 1.0). <IMAGE>
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