| 摘要 |
<p>A circuit for increasing the reverse breakdown voltage of a bipolar transistor (34) that provides drive current to an inductor (31) has a voltage control transistor (40) connected between the collector and base of the bipolar transistor (34), having a control element connected to one end of the inductor (31). The circuit can be fabricated as a portion of an integrated circuit formed on a single semiconductor substrate. Also disclosed is a method for increasing the emitter-collector breakdown voltage of a bipolar transistor (34) in which the base and collector of the bipolar transistor (34) are shorted when the emitter-collector voltage exceeds the breakdown voltage by turning on a transistor (40) connected between the base and collector of the bipolar transistor (34). <IMAGE></p> |
