| 摘要 |
forming a transistor and a bit line(5) on a substrate(1) and forming an interlayer insulation film(6) over the surface; forming a first contact hole(8) for charge storage electrode by etching a nitride film(7) formed on the interlayer insulation film and the interlayer insulation film in turn; forming a first conduction layer(9) with a number of hemisphere surface and an oxide film(10) on the first contact hole and on the nitride film; forming a second contact hole(11) by etching the oxide film(10) to expose the first conduction layer; forming a second conduction layer(12) thereon, and etching the second conduction layer, the oxide film and the first conduction layer in turn using a mask for charge storage electrode; forming a spacer(13a) with a third conduction layer formed on a side wall of the first conduction layer by etching-back the third and second conduction layers, after forming the third conduction layer(13) over the surface; and selectively wet-etching the nitride film, after removing the remaining oxide film.
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