发明名称 |
High performance, high bandgap, lattice-mismatched, GaInP solar cells |
摘要 |
High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications. |
申请公布号 |
US9484480(B2) |
申请公布日期 |
2016.11.01 |
申请号 |
US201414313720 |
申请日期 |
2014.06.24 |
申请人 |
Alliance For Sustainable Energy, LLC |
发明人 |
Wanlass Mark W;Carapella Jeffrey J;Steiner Myles A |
分类号 |
H01L31/065;H01L31/0687;H01L31/0216;H01L31/0224;H01L31/032;H01L31/068;H01L31/0693;H01L31/18 |
主分类号 |
H01L31/065 |
代理机构 |
|
代理人 |
Walts Suzanne C. |
主权项 |
1. A photovoltaic converter comprising:
a photovoltaic cell comprising GaInP having a bandgap greater than about 1.9 eV, wherein the photovoltaic cell has a junction and is lattice-mismatched to a parent substrate; and a graded layer positioned between the parent substrate and the photovoltaic cell, wherein: the parent substrate comprises GaAs, the graded layer has a lattice constant that changes from a first lattice constant in a first portion closest to the parent substrate to a second lattice constant in a second portion closest to the photovoltaic cell, such that the second lattice constant matches a relaxed lattice constant of the photovoltaic cell, the photovoltaic cell includes an emitter on a front side of the junction and a base on a back side of the junction, and the photovoltaic converter further comprises: (i) a double heterostructure comprising a back surface confinement layer on the base and a passivation/window layer on the emitter; (ii) a front contact layer comprising doped GaAsP between a metal grid and the passivation/window layer; (iii) an anti-reflection coating on the passivation/window layer between contacts of the front contact layer; and (iv) a back contact layer comprising doped GaAsP on the back surface confinement layer. |
地址 |
Golden CO US |