发明名称 High performance, high bandgap, lattice-mismatched, GaInP solar cells
摘要 High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
申请公布号 US9484480(B2) 申请公布日期 2016.11.01
申请号 US201414313720 申请日期 2014.06.24
申请人 Alliance For Sustainable Energy, LLC 发明人 Wanlass Mark W;Carapella Jeffrey J;Steiner Myles A
分类号 H01L31/065;H01L31/0687;H01L31/0216;H01L31/0224;H01L31/032;H01L31/068;H01L31/0693;H01L31/18 主分类号 H01L31/065
代理机构 代理人 Walts Suzanne C.
主权项 1. A photovoltaic converter comprising: a photovoltaic cell comprising GaInP having a bandgap greater than about 1.9 eV, wherein the photovoltaic cell has a junction and is lattice-mismatched to a parent substrate; and a graded layer positioned between the parent substrate and the photovoltaic cell, wherein: the parent substrate comprises GaAs, the graded layer has a lattice constant that changes from a first lattice constant in a first portion closest to the parent substrate to a second lattice constant in a second portion closest to the photovoltaic cell, such that the second lattice constant matches a relaxed lattice constant of the photovoltaic cell, the photovoltaic cell includes an emitter on a front side of the junction and a base on a back side of the junction, and the photovoltaic converter further comprises: (i) a double heterostructure comprising a back surface confinement layer on the base and a passivation/window layer on the emitter; (ii) a front contact layer comprising doped GaAsP between a metal grid and the passivation/window layer; (iii) an anti-reflection coating on the passivation/window layer between contacts of the front contact layer; and (iv) a back contact layer comprising doped GaAsP on the back surface confinement layer.
地址 Golden CO US