| 摘要 |
forming a gate(3) after forming a field oxide film(2) on a semiconductor substrate(1) to form a data line(4) on a source region; forming the first insulator(5), a polysilicon(6) for the first plate, the first dielectric film(7) and a polysilicon(8) for the first node; forming a node contact hole(9) by patterning; forming a side wall oxide film(10) on the side of the node contact hole(9) to form a plane polysilicon(11) for the second node, and forming the second insulator(12); forming a polysilicon(13) for the third node on the entire surface after forming the second insulator pattern(12a) by patterning the second insulator(12); forming a storage node(14); and forming the second dielectric film(15) on the storage node to form a plate(17) by depositing a polysilicon(16) for the second plate.
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