High dielectric TiO2-SiN composite films for memory applications
摘要
A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO2 or Ta2O5 interdiffused into a Si3N4 film is provided.
申请公布号
US5876788(A)
申请公布日期
1999.03.02
申请号
US19970783868
申请日期
1997.01.16
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
BRONNER, GARY BELA;COHEN, STEPHAN ALAN;DOBUZINSKY, DAVID MARK;GAMBINO, JEFFREY PETER;HO, HERBERT LEI;MADDEN, KAREN POPEK
