| 摘要 |
A flat substrate polishing pad conditioning head for a chemical-mechanical-planarization apparatus is provided which has been shown to double the useable life of a polishing pad used to planarize and/or polish both oxide and metal outer layers in the processing of semiconductor wafers and to provide for more uniform polishing during the life of the polishing pad. The polishing pad conditioning head (24) comprises a suitable substrate (26), a diamond grit (28) that is evenly distributed over the surface of the substrate (26) and a CVD diamond (30) grown onto the diamond grit (28) and the substrate (26) so that the diamond grit (28) becomes encased in the CVD diamond (30) and bonded to the surface of the substrate (26).
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