| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which ensures symmetrical property and high-speed property of memory data transmission time, without increasing a chip area and whose writing/reading operating margin is large. SOLUTION: A peripheral circuit long in a lateral direction is placed in the center of a chip vertical direction. Shift register parts which is long in the vertical direction are arranged above and below a chip, so that they are orthogonal with the circuit. Memory core parts and the shift register parts 2 are divisionally arranged as sets, so that they become symmetric. Thus, data line/signal line connecting the memory core parts, and the shift register parts 2 are shortened without increasing the chip area and the symmetric property of wiring is maintained. Thus, a high-speed operation semiconductor storage device whose operation margin is large can be realized. When block structure corresponding to data is given to the shift register parts 2 and the overlap order is made, so that wiring length between the peripheral circuit and the serial data input/output terminals of the shift register parts 2 becomes the shortest, the semiconductor storage device of the higher speed operation can be provided.
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