| 摘要 |
PROBLEM TO BE SOLVED: To avoid reducing channel regions due to increase in the integration degree of elements and suppress the appearance of the shot-channel effect, punch-through phenomenon, etc., to improve the characteristics of the elements. SOLUTION: An element isolation layer 27 for isolating active regions is formed embedded on the element isolation regions on a semiconductor 21. A gate first trench, having a square section and an elliptic gate second trench continuing the first trench, is formed in the active region surface. A gate oxide film 33 is formed on the surfaces of the gate first and gate second trenches. Gate electrodes 34 are embedded in the gate first and second trenches. Source/ drain regions 36, 37 are formed in the surface of the semiconductor substrate 21 on both sides of the gate electrode.
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