| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor diamond, capable of simply making a diamond into an n type by irradiation with a particle beam. SOLUTION: A diamond thin film piled on a diamond substrate or substrate material heated to >=300 deg.C and <=2,000 deg.C is irradiated with a particle containing at least S, a particle containing at least Li or a particle containing at least Cl. An n type semiconductor diamond having excellent characteristics is simply produced by the method. An n type semiconductor diamond having more excellent characteristics can be produced by maintaining a substrate temperature at >=800 deg.C.
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