发明名称 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
摘要 In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.
申请公布号 US2002115290(A1) 申请公布日期 2002.08.22
申请号 US20010792311 申请日期 2001.02.22
申请人 HALAHAN PATRICK B.;SINIAGUINE OLEG 发明人 HALAHAN PATRICK B.;SINIAGUINE OLEG
分类号 H01L29/872;H01L21/3205;H01L21/329;H01L21/768;H01L21/822;H01L23/48;H01L23/52;H01L23/552;H01L27/04;H01L29/47;H01L29/861;(IPC1-7):H01L21/44 主分类号 H01L29/872
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