发明名称 |
Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same |
摘要 |
In some embodiments, a circuit structure comprises a semiconductor substrate, an opening passing through the substrate between a first side of the substrate and a second side of the substrate, and a plurality of conductive layers in the opening. In some embodiments, one conductive layer provides an electromagnetic shield that shields the substrate from AC signals carried by a contact pad made from another conductive layer on a backside of the substrate. The conductive layers can also be used to form capacitor/rectifier networks. Manufacturing methods also provided.
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申请公布号 |
US2002115290(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20010792311 |
申请日期 |
2001.02.22 |
申请人 |
HALAHAN PATRICK B.;SINIAGUINE OLEG |
发明人 |
HALAHAN PATRICK B.;SINIAGUINE OLEG |
分类号 |
H01L29/872;H01L21/3205;H01L21/329;H01L21/768;H01L21/822;H01L23/48;H01L23/52;H01L23/552;H01L27/04;H01L29/47;H01L29/861;(IPC1-7):H01L21/44 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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