发明名称 |
Semiconductor device wiring and method of manufacturing the same |
摘要 |
A wiring of a semiconductor device and a method of manufacturing the same are disclosed. A first conductive layer is formed on a semiconductor substrate followed by a first insulation material which is deposited on the first conductive layer to form a first insulation layer. Then, a CMP process is implemented to form the first insulation layer. A second insulation layer is formed by depositing a second insulation material on the first insulation layer in order to cover a scratch formed on the first insulation layer after implementing the CMP process. A first etching pattern is formed by etching the second insulation layer to a thickness less than a thickness of the second insulation layer. Thereafter, a conductive material is deposited on the etching pattern and then a planarizing process is implemented to form a conductive pattern having a damascene shape. The formation of a bridge between neighboring conductive patterns caused by a scratch generated during implementation of CMP process can be prevented to markedly decrease defects in semiconductor devices.
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申请公布号 |
US2002117686(A1) |
申请公布日期 |
2002.08.29 |
申请号 |
US20000737540 |
申请日期 |
2000.12.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAE-HOON;NAM KUNG-HYON |
分类号 |
H01L21/768;(IPC1-7):H01L31/033 |
主分类号 |
H01L21/768 |
代理机构 |
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地址 |
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