| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a film by MOCVD method of a PZT capacitance comprising various superior ferroelectric characteristics on an Ru lower electrode which is easy to etch and to specify an Ru-PZT interface structure obtained by the method so as to be applied to a ferroelectric memory device. SOLUTION: As the Ru-PZT interface structure, when Ru and PZT come into direct contact at least locally, a large residual dielectric polarization value is displayed. When a Pb raw material becomes aged, an interface layer composed mainly of RuO2 is generated in an interface, and the residual dielectric polarization value is reduced. It has been demonstrated experimentally that generally the case in which interface layer is generated occurs more frequently. When the interface layer comes into contact with Ru, RuO2 and PZT so as to be composed of a metal oxide layer composed of an oxide by Pb, Ti and Ru, a ferroelectric characteristic which is industrially sufficient is displayed. When the structure is applied to a semiconductor memory device, the superior ferroelectric memory device can be realized.
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