SONOS FLASH MEMORY DEVICE AND FORMATION METHOD THEREOF

摘要

PURPOSE: An SONOS(Silicon Oxide Nitride Oxide Semiconductor) flash memory device and a formation method thereof are provided to minimize interference between adjacent cells. CONSTITUTION: A semiconductor substrate(200) defined by a plurality of isolation regions(202a) and active regions(204) is prepared. A dielectric film(212) composed of a lower oxide(206), a nitride(208) and an upper oxide(210) is formed on the active regions(204) and is to be cross with a plurality of gate lines(214). A plurality of impurity diffusion regions(216a-216d) are formed in the active regions of both sides of the gate lines. The lower portion of the gate lines(214) is directly connected to the upper part of the isolation regions(202a).