发明名称 |
Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer |
摘要 |
A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.
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申请公布号 |
US6479854(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US19990353574 |
申请日期 |
1999.07.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
THAKUR RANDHIR P. S.;MERCALDI GARRY A.;NUTTALL MICHAEL |
分类号 |
G11C11/404;G11C17/16;H01L21/02;H01L21/285;H01L21/768;H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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