| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device realizing dynamic memory by the memory cell of simple transistor structure. SOLUTION: A 1-bit memory cell MC consists of a single MISFET having the channel body of floating, and the MISFET dynamically stores a first data state where a channel body is set to be a first potential and a second data state where the channel body is set to be a second potential. The MISFET has the laminated structure of a p-type layer 12 becoming the channel body, an n-type layer 11 in contact with its bottom surface to be depleted by built-in potential, and a p-type layer (substrate) 10 in contact with its bottom surface. A gate electrode 14 is formed on the upper surface of a p-form layer 12 through a gate insulation film 13, and a drain and source diffusion areas 15 and 16 are formed in the depth to the n-type layer 11.
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