发明名称 METHOD FOR EVALUATING SILICON WAFER SURFACE-QUALITY
摘要 PROBLEM TO BE SOLVED: To provide a method for evaluating silicon wafer surface-quality, by which variance of evaluation of silicon wafer surface-quality in an SCL-R evaluation method can be eliminated and stable evaluation can be performed. SOLUTION: In the method for evaluating a silicon wafer, the silicon wafer surface is etched for a long time by using a treatment solution consists of ammonia water, hydrogen peroxide water, and water, the number of LPD formed on the surface of silicon wafer is checked, thereby, the silicon wafer is evaluated. A chelating agent is added in the treatment solution.
申请公布号 JP2002353281(A) 申请公布日期 2002.12.06
申请号 JP20010161056 申请日期 2001.05.29
申请人 SHIN ETSU HANDOTAI CO LTD;MIMASU SEMICONDUCTOR INDUSTRY CO LTD 发明人 KOBAYASHI TAKESHI;MARUYAMA FUMIAKI
分类号 H01L21/66;H01L21/304;(IPC1-7):H01L21/66 主分类号 H01L21/66
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