| 摘要 |
A non-volatile memory device has memory cells arranged in addressable columns. The memory cells in each column are coupled to a common bit line. Bit line driver circuitry coupled to the bit line includes multiple drivers. In one embodiment, two drivers are coupled to opposite ends of the bit line. The driver circuits can be activated together, or separately, in response to decoder circuitry. The memory device can be a flash memory device having floating gate memory cells.
|
