| 摘要 |
PROBLEM TO BE SOLVED: To perform etching without causing an under cut by using chemical dry etching and to perform work similar to anisotropic etching with isotropic etching without generating etching damages. SOLUTION: In a chemical dry etching method, an etching mask pattern is formed on the surface of a material to be etched, which is formed on the surface of a substrate, and etched. (a) The material to be etched is formed in such a way that the etching rate gradually becomes smaller toward the surface. (b) The etching mask pattern is formed on the surface of the material to be etched. (c) The material to be etched is etched through chemical dry etching.
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