| 摘要 |
A capacitor that is a metal to polysilicon capacitor. The capacitor is fabricated by forming a field oxide layer on a substrate. Then, a polysilicon segment is formed on the field oxide layer. This polysilicon segment forms a polysilicon bottom plate for the capacitor. A dielectric layer is formed and planarized. An opening is made in the dielectric layer to expose a portion of the polysilicon segment. Then, an oxide layer is formed on exposed portions of the polysilicon segment. A metal segment is formed on the oxide layer over the opening, wherein the metal segment forms a top-plate for the semiconductor device.
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