SEMICONDUCTOR DEVICE HAVING MEMORY CELL AND PERIPHERAL CIRCUITRY WITH DUMMY ELECTRODE

摘要

A semiconductor device includes: a semiconductor substrate having a memory cell section and a peripheral circuit section defined in a plane; a floating gate electrode formed on semiconductor substrate in the memory cell section; a control gate electrode laminated thereabove; a gate electrode as a peripheral circuit electrode formed in one-layer-structure on semiconductor substrate in the peripheral circuit section; a first dummy electrode formed in the peripheral circuit section so as to have approximately same thickness as floating gate electrode; and a second dummy electrode laminated thereabove so as to have approximately same thickness as control gate electrode.