Super junction semiconductor device

摘要

There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed on a substrate, and a transition area disposed between the cell area and the junction termination area, and the cell area, the junction termination area, and the transition area each include one or more unit cells comprising a N-type pillar region and a P-type pillar region among a plurality of N-type pillar regions and a P-type pillar regions that are alternated between the cell area and the junction termination area.

主权项

1. A super junction semiconductor device comprising:
a cell area and a junction termination area disposed on a substrate; and a transition area disposed between the cell area and the junction termination area, wherein the cell area, the junction termination area, and the transition area each include at least one unit cell, the unit cell comprising a N-type pillar region and adjacent to a P-type pillar region, wherein the unit cells are disposed adjacent to each other such that the corresponding N-type pillar regions and the P-type pillar regions alternate through the cell area, the junction termination area and the transition area, and wherein an average width of a unit cell in the transition area is smaller than an average width of a unit cell in the cell area and the junction termination area.