Method for carrying out a conductive direct metal bonding

摘要

A method includes a) Providing a first substrate covered by a metal layer and a second substrate covered by a metal layer, b) Bringing into direct contact the metal layers so as to form a bonding interface having metal material bridges separated by cavities which are fluidly connected to each other, d) Immersing the bonding interface in an oxidizing fluid so as to form a metal oxide which fills at least in part the cavities and metal/metal oxide/metal contact areas. A structure is also provided having a first substrate, a first metal layer, a second metal layer forming a bonding layer with the first metal layer, and a second substrate, the bonding interface having: metal material bridges separated by cavities, a metal oxide partially filling the cavities, and metal/metal oxide/metal contact areas.

主权项

1. A method for carrying out a conductive direct metal bonding between two substrates of semi-conductive materials, comprising the steps of:
a) Providing a first substrate a surface of which is covered by a first metal layer, and a second substrate a surface of which is covered by a second metal layer, b) Bringing into direct contact the first metal layer and the second metal layer so as to form a bonding interface comprising metal material bridges between the first metal layer and the second metal layer, the metal material bridges being separated by cavities which are fluidly connected to each other, d) Immersing the bonding interface in an oxidizing fluid so as to oxidize, at least in part, portions of the first metal layer and portions of the second metal layer which delimit the cavities, this oxidation generating a metal oxide which fills, at least in part, the cavities, the metal oxide forming contact areas between the portions of the first metal layer and the second metal layer which delimit the cavities.