SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a TFT having high reliability. SOLUTION: A gate insulation type field effect semiconductor device comprises a channel forming region surrounded by a thin film made of an SiOxNyto prevent impurities from a glass board or an atmosphere from being diffused. Thus, the high reliability can be obtained even in an acceleration test like a BT test. COPYRIGHT: (C)2003,JPO