NON-VOLATILE MEMORY CELL WITH FLOATING GATE AND FORMING METHOD THEREOF

摘要

PURPOSE: An NVM(non-volatile memory) cell with a floating gate is provided to increase the surface area of the floating gate and reduce an operating voltage of an NVM memory cell by making the floating gate of a sidewall of an unevenness type. CONSTITUTION: An isolation layer(103) for defining an active region is formed in a semiconductor substrate(101). The floating gate(110b) in which a plurality of the first conductive layer patterns(107b) and a plurality of the second conductive layer patterns(109b) are alternatively stacked is disposed on the active region. The first insulation layer is interposed between the floating gate and the active region. The sidewall of the floating gate is an unevenness type in which either one of the first conductive layer pattern or the second conductive layer pattern protrudes.