METHOD FOR FABRICATING SILICON OPTOELECTRONIC DEVICE, SILICON OPTOELECTRONIC DEVICE FABRICATED THEREBY, IMAGE INPUT AND/OR OUTPUT DEVICE USING THE SAME

摘要

PURPOSE: A method for fabricating a silicon optoelectronic device is provided to be used in an image input and/or output device capable of directly inputting image information to the inside of an image display and/or a screen by disposing a silicon optoelectronic device of a secondary array to form a silicon optoelectronic device panel. CONSTITUTION: An n-type or p-type substrate(1) based upon a silicon is prepared. An etch process is performed on the surface of the substrate to artificially form a microdefect pattern(7). A control layer(9) with an opening is formed on the microdefect pattern. An ultimately shallow doping of an opposite type to the substrate is formed through the opening in the surface of the substrate with the microdefect pattern so that a photoelectric conversion effect occurs in a p-n junction part(8) of the substrate due to a quantum confinement effect and light emission and/or light reception happens.