METHOD OF FORMING DIELECTRIC FILM USING ALTERNATELY DIELECTRIC FILM DEPOSITION AND HEAT TREATMENT

摘要

PURPOSE: A method of forming a dielectric film is provided to reduce leakage current by obtaining the dielectric film with a desired thickness using alternately a dielectric film deposition and a heat treatment. CONSTITUTION: A first dielectric film is formed on a predetermined layer. A first heat treatment is performed thereon. A second dielectric film is formed on the heat-treated first dielectric film. A second heat treatment is performed thereon. The heat treatments are performed under a predetermined gas atmosphere or under a vacuum condition. The predetermined gas is one selected from a group consisting of O2, O3, N2, Ar, He, O2 plasma, and NH3 plasma.