| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for stably forming a high-definition fine pattern to be used for the process of manufacturing a semiconductor such as an IC, for manufacturing a circuit board of a liquid crystal, a thermal head or the like, and for other photofabrication processes, and to provide a resin composition used in the method, a developer used in the method, and a rinsing solution for negative development used in the method.SOLUTION: A pattern forming method is provided, which comprises: (1) a step of applying a positive resist composition on a substrate, the composition exhibiting increase in the solubility with a positive developing solution and decrease in the solubility with a negative developing solution by irradiation with active rays or radiation; (2) an exposure step; and (4) a step of developing the composition by use of a negative developing solution. The present invention also provides a positive resist composition for multiple-development to be used in the above method, a developing solution to be used in the above method, and a rinsing solution for negative development to be used in the above method.SELECTED DRAWING: None |
