REDUCTION OF SECOND BREAKDOWN IN PLANAR TRANSISTORS

摘要

A semiconductor device having a transistor, in particular a power transistor, of the planar type which comprises a distributed base-series resistor for safety against second breakdown. According to the invention the base resistor is formed in that a resistance-increasing region which is present beyond the emitter zone and substantially entirely surrounds the inner contact surface is present in the base zone between the contact surfaces of the emitter and base electrode layers surrounding each other along substantially the whole edge of the emitter-base junction.