SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS PROVIDING HALO IMPLANT PEAK CONFINEMENT AND RELATED METHODS

摘要

A semiconductor device may include a semiconductor substrate, and a plurality of field effect transistors (FETs) on the semiconductor substrate. Each FET may include a gate, spaced apart source and drain regions on opposite sides of the gate, upper and lower vertically stacked superlattice layers and a bulk semiconductor layer therebetween between the source and drain regions, and a halo implant having a peak concentration vertically confined in the bulk semiconductor layer between the upper and lower superlattices.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; and a plurality of field effect transistors (FETs) on the semiconductor substrate and each comprising
a gate,spaced apart source and drain regions on opposite sides of the gate,upper and lower vertically stacked superlattice layers and a bulk semiconductor layer therebetween between the source and drain regions, anda halo implant having a peak concentration vertically confined in the bulk semiconductor layer between the upper and lower superlattices.