| 发明名称 |
FIELD EFFECT TYPE SEMICONDUCTOR SWITCHING ELEMENT |
| 摘要 |
PURPOSE:To improve turn off characteristics and facilitate production by connecting the individual gate regions forming stripes of field effect type semiconductor switching elements to gate electrodes through p<+> type semiconductor layer of low resistance. |
| 申请公布号 |
JPS5438778(A) |
申请公布日期 |
1979.03.23 |
| 申请号 |
JP19770104839 |
申请日期 |
1977.09.02 |
| 申请人 |
HITACHI LTD |
发明人 |
NAGANO TAKAHIRO;MIYATA KENJI |
| 分类号 |
H01L29/74;H01L29/10;H01L29/739 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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| 地址 |
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