发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes a memory cell, a sense amplifier electrically connected to the memory cell, the sense amplifier including a node for sensing a voltage during a sense operation and a data latch electrically connected to the node and configured to hold a first voltage corresponding to a voltage of the node when a strobe signal is issued during a strobe operation, and a controller configured to raise the voltage of the node during the strobe operation before the strobe signal is issued. |
申请公布号 |
US9524789(B2) |
申请公布日期 |
2016.12.20 |
申请号 |
US201615073555 |
申请日期 |
2016.03.17 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Maejima Hiroshi |
分类号 |
G11C16/26;G11C16/04;G11C16/06;G11C7/04 |
主分类号 |
G11C16/26 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A semiconductor memory device, comprising: a memory cell; a sense amplifier electrically connected to the memory cell and including a node for sensing a voltage during a sense operation; and a controller configured to perform the sense operation and a strobe operation during a read operation, and including a sense node driver that is configured to raise the voltage of the node, by outputting a first voltage during the sense operation and outputting a second voltage during the strobe operation, the first voltage being higher than the second voltage, wherein the voltage of the node is raised by a first amount during the sense operation and by a second amount during the strobe operation, the first amount being greater than the second amount. |
地址 |
Tokyo JP |