| 摘要 |
PURPOSE:To form junctions at lamination boundaries and then perform continuous production without forming layer insulators by a method wherein the supply is performed by orienting the direction of flow of reactive gas in parallel with the surface to be formed, and a waveguide connected to a reaction vessel for supplying microwave energy is provided. CONSTITUTION:As semiconductor reactive gas, silane is supplied from the port 28, and carrier gas such as hydrogen from the ports 27 and 26 according to necessity, and thus high frequency energy is supplied by a high frequency power source 15 by means of electrodes which compose a pair. A substrate is heated by a heater 12. The reactive gas flows along the surface to be formed of the substrate 2 from upward to downward, and then reaches a vacuum pump 37. A reaction vessel 7 possesses a peep window 8, a copper net for preventing electric wave leakage 49, and a quartz pipe for microwave supply 55, the wave guide 54, and a microwave power source 56 on the back side. They are so provided that electric fields of the reactive gasses 26, 27, 28 and the high frequency 15 are arranged in parallel along the surface to be formed of the substrate 2. In addition to the high frequency, microwave of frequency of 1GHz or more is supplied. |
