| 摘要 |
The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: - a first mirror (102, 202, 302, 402, 502), - a first conductive layer (103, 203, 303, 403, 503), - a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and - a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein - the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, - the first mirror is electrically conductive, and - the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices. |
