| 摘要 |
PURPOSE:To obtain the titled element of a high luminous efficiency and high speed response excellent in mass productivity and suitable as the light source for optical communication by a method wherein the hole concentration of a P type GaAlAs active layer doped with Ge is set within a specific range. CONSTITUTION:A P type GaAlAs cld layer 2, a P type GaAlAs active layer 3 doped with Ge, and an N type GaAlAs clad layer 4 are formed by successive lamination on a P type GaAs substrate 1. The first electrode 5 is formed on the lower surface of said substrate 1, and the second electrode 6 on the upper surface of said clad layer 4. In such a construction, the control of the hole concentration of said active layer 3 at 1X10<17>cm<-3>-5X10<18>cm<-3> causes the response at 20MHz or more and light emitting output at 2mW or more. The hole concentration of said layer 3 is in accordance with the doping amount of Ge doped to this layer 3, and the hole concentration can be easily controlled based on the condition for Ge doping. |
