SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve thermal stability by a method wherein a metallic layer formed of at least one kind of group comprising titanium and silicon as well as a rhenium alloy is provided on the surface of an N type gallium arsenide to form a Schottky barrier. CONSTITUTION:A GaAs layer 2 with specific resitance of 0.3-0.05OMEGA.cm is formed on a GaAs insulating substrate or GaAs resistive substrate 1 by vapor epitaxial growing process. Then a silicon dioxide film as the first protecting films 3 are formed by CVD process and a part thereof is removed by chemical etching process exposing the clean surface of GaAs to form a Schottky electrode 4 by evaporating tungsten etc. using electronic beam thermal evaporating process or sputtering process at high vacuum status. Furthermore the second protective films 5 are formed by the same process as that of the films 3. A part of the films 3 and 5 is removed exposing the clean surface of GaAs to further produce an ohmic electrode 6. In such a constitution, the Schottky barrier may be thermally stabilized to withstand any heat treatment at high temperature.