| 摘要 |
PURPOSE:To obtain the titled device of multilayer wiring structure difficult to generate malfunction even in the case of reduction only in the horizontal direction, by a method wherein a substance of smaller dielectric constant than that of the interlayer insulating substance is used for the insulating substance between adjacent wirings. CONSTITUTION:In the case of the title device of three-layer wiring structure, e.g. a semiconductor substrate 1 is isolated from a wiring 3 with an Si nitride film 2; the wiring 3 from wirings 6, 6 and 6'' with an Si nitride film 4; the wirings 6, 6', and 6'' from a wiring 8 with an Si nitride film 7; and the wirings 6, 6', and 6'' from one another with Si dioxide films 5. The Si nitride films 2, 4, and 7 have a relative dielectric constant of about 8, and the Si dioxide 5 has a relative dielectric constant of about 3.9. Therefore, compared with the case of filling with the same dielectric substance, the proportion of the mutual capacitance of adjacent wirings to the total capacitance of wirings can be kept to approx. half. Accordingly, the potential variation due to the mutual capacitance of adjacent wirings can be kept to approx. half, and the mulfunction of the IC is difficult to occur even in improvement of integration degree by reduction only in the horizontal direction. |
