Semiconductor structures including liners comprising alucone and related methods

摘要

A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

主权项

1. A semiconductor structure, comprising:
stack structures comprising at least two chalcogenide materials overlying a substrate; and a liner comprising alucone on sidewalls of at least a portion of the stack structures.