| 摘要 |
<p>PURPOSE:To obtain a lateral PNP transistor which is strong against a surge voltage by separating the contact section of the collector electrode of a collector region from the outer periphery of the collector region as far as a specific distance or further. CONSTITUTION:In a lateral PNP transistor in which an input signal in the input stage of an integrated circuit is applied directly to its base electrode, the collector section 10a of the collector electrode 10 of a collector region 6 is isolated at least 8mum or more from the outer periphery of the region 6. For example, one P-type region 5 formed by diffusing in an N-type epitaxial layer 2 on the surface of a P<-> type substrate 1 is employed as an emitter, the other P-type region 6 is employed as a collector and the layer 2 is employed as a base, and the region 5 is formed in a structure surrounded by the collector region 6. The position of the contact section 10a of the electrode 10 is so set at a distance A as shown as to be 8mum or above. Thus, the concentration of an electric field when a surge voltage is applied to a base terminal is alleviated, and its surge resistance voltage can be enhanced.</p> |
