| 摘要 |
PURPOSE:To enable the formation of a memory IC of large capacity small in area by a method wherein a support lead pin which supports the memory chip and a lead pin connected to the bonding pad of a memory chip are provided, and the memory chips are arranged as being stacked up at a specified interval. CONSTITUTION:Four memory chips 10 are three-dimensionally arranged in four layers, a support lead pin 20 which supports the chip 10 is provided to four corners of a rectangular chip 1 respectively, lead pins 30 connected to the bonding pads of the chips 10 and a selection lead pin 40 which sends an electric signal of a selection signal to each of the memory chips 10 to electrically select the chips 10 stacked in four layers are provided along each side of the chips 10. And, the support lead pin 20 is made to serve also as a power supply terminal of the chip 10. The lead pin 30 is composed of two metal plates 31 and 32 overlapped each other, and a protrusion 36 of the metal plate 32 is connected to a pad 34 of the chip 10 through the intermediary of a gold wire 35. The selection lead pin 40 is composed of metal plates 41-44 heaped up in layers, and a protrusion 45 provided to each of the plates 41-44 is connected to the pad 34 of the chip 10 through the intermediary of the gold wire 35. |
