发明名称 |
CIRCUIT ARRANGEMENT FOR DETECTING AN EXCESS TEMPERATURE IN SEMICONDUCTOR POWER DEVICES |
摘要 |
<p>The temperature of the power semiconductor component is sensed by a bipolar transistor. The bipolar transistor is in series with a depletion mode MOSFET whose gate and source electrodes are connected together. The drain electrode is also connected to a threshold element. Normally, the FET has low impedance, so that at the input of the threshold element source potential, e.g. ground potential, is present. With current rising as a function of temperature, the current through the FET is limited to a constant, essentially temperature-independent value, and the potential at the input of the threshold element rises steeply. This condition is detected as an overtemperature signal.</p> |
申请公布号 |
EP0240807(B1) |
申请公布日期 |
1990.10.24 |
申请号 |
EP19870104113 |
申请日期 |
1987.03.20 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
EINZINGER, JOSEF, DIPL.-ING.;FELLINGER, CHRISTINE;LEIPOLD, LUDWIG, DIPL.-ING.;TIHANYI, JENOE, DR.;WEBER, ROLAND, DIPL.-ING. |
分类号 |
H01L29/73;G01K3/00;G01K7/01;H01L21/331;H01L23/58 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|