DENKITEKINIPUROGURAMU*SHOKYOKANONAMOSMEMORI*SERU

摘要

In the electrically alterable read only memory cell a reduction in cell area and an improvement in tolerance allowed for programming and erase voltages is achieved utilizing a diffused control gate (3) having improved capacitive coupling to the floating gate (7) through a thin oxide layer (5) grown on single crystal silicon (1). A thin oxide layer (6) is also grown over the channel area (2). Polyoxide layers (8) and (10) isolate the programming gate (9) from the floating gate (7) and the latter from the erase gate (11). The ratio of thickness between the oxide layers (5) and (6) and the polyoxide layers (8) and (10) is of one to four or five.