发明名称 MOVEABLE AND ADJUSTABLE GAS INJECTORS FOR AN ETCHING CHAMBER
摘要 An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.
申请公布号 US2016284616(A1) 申请公布日期 2016.09.29
申请号 US201615178623 申请日期 2016.06.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LU Tzung-Shiun;CHEN Chun-Lang;YANG Shih-Hao;CHANG Jong-Yuh
分类号 H01L21/66;H01L21/3065 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method of substrate processing, comprising: performing a first etch on a first substrate using an etching chamber which includes a circular gas injector module comprising an inner track, an outer track, and a plurality of moveable and adjustable gas injectors; measuring a dimension at a plurality of locations on the first substrate; and adjusting at least one of a position or a gas flow rate of at least one of the adjustable gas injectors based on the measuring.
地址 Hsin-Chu TW