EEPROM AND THE PROGRAMMING METHOD

摘要

The electrically erasable and programmable ROM has a matrix of memory chains connected between the bit lines and earth, each memory chain comprising a number of memory cells. Each cell has source and drain region of a second conductivity type formed in a semiconductor substrate of a first conductivity type, with a channel region between source and drain. An gate oxide layer covers the channel region and part of the drain region, followed by carrying a floating gate which overlaps with a part of the drain region. This device provides the high reliability without interuption.