VERFAHREN ZUR STABILISIERUNG VON PN-UEBERGAENGEN.

摘要

On a semiconductor substrate (11), pref. Si, an oxide layer (12), pref. more than 100nm SiO2, is formed followed by a nitride layer (13), pref. more than 100nm thick Si-nitride. Then a photoresist layer is deposited and defined and the nitride layer etched. The oxide layer is then etched by a wet process. The feature is that in the next step the nitride overhang, caused by oxide-overetch, is removed and the nitride layer undercut until its boundary is a certain distance removed from the window formed by the oxide. Then the photoresist layer is removed. The passivation edge then shows 2 steps.