Sputtering method for forming superconducting films using water vapor addition.

摘要

A superconducting film is deposited in a closed, non-baked reactor (10) containing a sputtering gas comprising O2 with H2O vapor addition to preferably provide a total H2O vapor pressure of between 0.3 Pa to 26.6 Pa (3 X 10<-><3> mbar to 266 X 10<-><3> mbar), where a copper oxide-based target material (15) is used and the deposition substrates (16) are maintained between 550-C and 800-C.