| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for fabricating semiconductor device is disclosed. A substrate having a first gate layer and a first dielectric layer thereon is provided. A shallow trench isolation (STI) is formed in the substrate and surrounds the first gate layer and the first dielectric layer. The first dielectric layer is removed. A first spacer is formed on the sidewall of the STI above the first gate layer. Using the first spacer as mask, part of the first gate layer and part of the substrate are removed for forming a first opening while defining a first gate structure and a second gate structure. |
| 申请公布号 |
US2016284551(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201615175008 |
申请日期 |
2016.06.06 |
| 申请人 |
Powerchip Technology Corporation |
发明人 |
Chu Chien-Lung;Chen Chun-Hung;Chiu Ta-Chien |
| 分类号 |
H01L21/28;H01L21/3105;H01L29/66;H01L27/115;H01L29/40;H01L29/49;H01L21/762 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first gate layer and a first dielectric layer thereon, and a shallow trench isolation (STI) in the substrate and surrounding the first gate layer and the first dielectric layer; removing the first dielectric layer; forming a first spacer on the sidewall of the STI above the first gate layer; and using the first spacer as mask to remove part of the first gate layer and part of the substrate for forming a first opening while defining a first gate structure and a second gate structure. |
| 地址 |
Hsinchu TW |
